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Manufacturer Part Number: | IPB80N03S4L02ATMA1 |
Manufacturer: | Rochester Electronics |
Part of Description: | MOSFET N-CH 30V 80A TO263-3-2 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 15835 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | OptiMOS™ |
Package | Bulk |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 9.75 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |