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Manufacturer Part Number: | PHT6N06LT,135 |
Manufacturer: | Rochester Electronics |
Part of Description: | POWER FIELD-EFFECT TRANSISTOR, 2 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 427066 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | TrenchMOS™ |
Package | Bulk |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 5 V |
Vgs (Max) | ±13V |
Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |