Rochester Electronics / IPS65R650CEAKMA1

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	86W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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