NXP Semiconductors / PHK4NQ10T,518

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Type	Description
Series	TrenchMOS™
Package	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	70mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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