Rochester Electronics / FDD6512A

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Type	Description
Series	PowerTrench®
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	10.7A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	21mOhm @ 10.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1.082 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 43W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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