GeneSiC Semiconductor / GA05JT12-263

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Type	Description
Series	-
Package	Tube
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	106W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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