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Manufacturer Part Number: | FQP9N90C |
Manufacturer: | Rochester Electronics |
Part of Description: | POWER FIELD-EFFECT TRANSISTOR, 8 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 2470 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | QFET® |
Package | Bulk |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900 V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2.73 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 205W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |