STMicroelectronics / STH3N150-2

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Type	Description
Series	PowerMESH™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1500 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29.3 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	939 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H²PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab) Variant

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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