Rochester Electronics / FQNL2N50BBU

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Type	Description
Series	QFET®
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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