Toshiba Electronic Devices and Storage Corporation / TPN4R712MD,L1Q

Manufacturer Part Number: TPN4R712MD,L1Q
Manufacturer: Toshiba Electronic Devices and Storage Corporation
Part of Description: MOSFET P-CH 20V 36A 8TSON
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 6602 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesU-MOSVI
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 10 V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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