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Manufacturer Part Number: | TPN4R712MD,L1Q |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Part of Description: | MOSFET P-CH 20V 36A 8TSON |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 6602 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | U-MOSVI |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 18A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |