Rochester Electronics / IAUT300N08S5N014ATMA1

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Type	Description
Series	OptiMOS™-5
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	300A (DC)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 230µA
Gate Charge (Qg) (Max) @ Vgs	187 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13.178 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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