Rochester Electronics / UPA621TT-E1-A

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.3 nC @ 4 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WSOF
Package / Case	6-SMD, Flat Leads

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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