Rochester Electronics / RJK03M6DNS-00#J5

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	9.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	7.1 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1.19 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	12.5W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HWSON (3.3x3.3)
Package / Case	8-PowerWDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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