Rochester Electronics / IRF6898MTRPBF

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta), 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.1mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 4.5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5630 pF @ 13 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DirectFET™ Isometric MX
Package / Case	DirectFET™ Isometric MX

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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