IR (Infineon Technologies) / IRLL1503

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Type	Description
Series	HEXFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3.3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	5730 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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