Rochester Electronics / 2SK4196LS

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.56Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14.6 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FI(LS)
Package / Case	TO-220-3 Full Pack

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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