Rochester Electronics / PSMN014-80YLX

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Type	Description
Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	28.9 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4.64 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	147W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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