ROHM Semiconductor / SCT3120ALGC11

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Type	Description
Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id	5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	103W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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