Rochester Electronics / IRFB31N20DPBF

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2.37 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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