Rochester Electronics / IRLML6302GTRPBF

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	780mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Rds On (Max) @ Id, Vgs	600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.6 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	97 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	540mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro3™/SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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