IR (Infineon Technologies) / IPSH4N03LA G

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REMARK: Buy the IPSH4N03LA G IR (Infineon Technologies) on xunyun-ic.com, we are IR (Infineon Technologies) Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the IPSH4N03LA G within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	OptiMOS™
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Stub Leads, IPak

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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