Rochester Electronics / IRFH4210DTRPBF

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	44A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4.812 pF @ 13 V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PQFN (5x6)
Package / Case	8-PowerTDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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