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Manufacturer Part Number: | IPL65R1K0C6SATMA1 |
Manufacturer: | Rochester Electronics |
Part of Description: | MOSFET N-CH 650V 4.2A THIN-PAK |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 4295 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | CoolMOS™ C6 |
Package | Bulk |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 34.7W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Thin-PAK (5x6) |
Package / Case | 8-PowerTDFN |