Toshiba Electronic Devices and Storage Corporation / TW070J120B,S1Q

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Manufacturer Part Number:	TW070J120B,S1Q
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Part of Description:	SICFET N-CH 1200V 36A TO3P
Lead Free Status / RoHS Status:	Lead Free / RoHS Compliant
Stock Condition:	273 In Stock
Ship From:	Hong Kong
Shipment Way:	DHL/Fedex/TNT/UPS/EMS

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Type	Description
Series	*
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id	5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Vgs (Max)	±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	272W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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Stock Status: 273

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