Rochester Electronics / IPB096N03LGATMA1

Image is for reference, please contact us to get the real picture

REMARK: Buy the IPB096N03LGATMA1 Rochester Electronics on xunyun-ic.com, we are Rochester Electronics Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the IPB096N03LGATMA1 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	OptiMOS™
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.6 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1371

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	2SK2103T100 ROHM Semiconductor
	NTB60N06T4G Sanyo Semiconductor/ON Semiconductor
	SCT10N120AG STMicroelectronics
	AOTF29S50L Alpha and Omega Semiconductor, Inc.
	PSMN4R3-30BL,118 Nexperia
	SPI80N04S2-04 IR (Infineon Technologies)
	IRF1010EZL IR (Infineon Technologies)
	NTB5411NT4G Sanyo Semiconductor/ON Semiconductor
	TK20G60W,RVQ Toshiba Electronic Devices and Storage Corporation
	SI4403CDY-T1-GE3 Vishay / Siliconix