Rochester Electronics / FDFMA3P029Z

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Type	Description
Series	PowerTrench®
Package	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	87mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 15 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-MicroFET (2x2)
Package / Case	6-VDFN Exposed Pad

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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