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Manufacturer Part Number: | SIHD6N65ET1-GE3 |
Manufacturer: | Vishay / Siliconix |
Part of Description: | MOSFET N-CH 650V 7A TO252AA |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 3834 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | E |
Package | Tape & Reel (TR) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |