Vishay / Siliconix / SIHD6N65ET1-GE3

Image is for reference, please contact us to get the real picture

REMARK: Buy the SIHD6N65ET1-GE3 Vishay / Siliconix on xunyun-ic.com, we are Vishay / Siliconix Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the SIHD6N65ET1-GE3 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	E
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1764

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	SSM3K15AFU,LF Toshiba Electronic Devices and Storage Corporation
	NVTFS5C658NLWFTAG Sanyo Semiconductor/ON Semiconductor
	FQU2N60TU Rochester Electronics
	TK155A65Z,S4X Toshiba Electronic Devices and Storage Corporation
	AO4476A_104 Alpha and Omega Semiconductor, Inc.
	PSMN021-100YLX Nexperia
	IRFP7537PBF IR (Infineon Technologies)
	FDI8441 Rochester Electronics
	STB13N80K5 STMicroelectronics
	IPB260N06N3G Rochester Electronics