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Manufacturer Part Number: | SISS10ADN-T1-GE3 |
Manufacturer: | Vishay / Siliconix |
Part of Description: | MOSFET N-CH 40V 31.7A/109A PPAK |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 403 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 31.7A (Ta), 109A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.65mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
Vgs (Max) | +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds | 3030 pF @ 20 V |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 56.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8S (3.3x3.3) |
Package / Case | PowerPAK® 1212-8S |