Toshiba Electronic Devices and Storage Corporation / TPN2010FNH,L1Q

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Manufacturer Part Number:	TPN2010FNH,L1Q
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Part of Description:	MOSFET N-CH 250V 5.6A 8TSON
Lead Free Status / RoHS Status:	Lead Free / RoHS Compliant
Stock Condition:	2244 In Stock
Ship From:	Hong Kong
Shipment Way:	DHL/Fedex/TNT/UPS/EMS

REMARK: Buy the TPN2010FNH,L1Q Toshiba Electronic Devices and Storage Corporation on xunyun-ic.com, we are Toshiba Electronic Devices and Storage Corporation Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the TPN2010FNH,L1Q within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	U-MOSVIII-H
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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