Microsemi / 2N6766

Image is for reference, please contact us to get the real picture

REMARK: Buy the 2N6766 Microsemi on xunyun-ic.com, we are Microsemi Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the 2N6766 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	4W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-204AE

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1967

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	IRF7413ZTRPBF IR (Infineon Technologies)
	IPB80N06S3-07 IR (Infineon Technologies)
	IPA80R1K4P7XKSA1 IR (Infineon Technologies)
	IPB12CN10N G IR (Infineon Technologies)
	NTE2373 NTE Electronics, Inc.
	MCH3474-TL-H Rochester Electronics
	IPP80N06S2H5AKSA1 IR (Infineon Technologies)
	FDMS86252 Sanyo Semiconductor/ON Semiconductor
	SIHW33N60E-GE3 Vishay / Siliconix
	STW28NK60Z STMicroelectronics