GeneSiC Semiconductor / GA10JT12-263

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REMARK: Buy the GA10JT12-263 GeneSiC Semiconductor on xunyun-ic.com, we are GeneSiC Semiconductor Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the GA10JT12-263 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	-
Package	Tube
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	120mOhm @ 10A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1403 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	-
Package / Case	-

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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