Rochester Electronics / FQA13N80-F109

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Manufacturer Part Number:	FQA13N80-F109
Manufacturer:	Rochester Electronics
Part of Description:	POWER FIELD-EFFECT TRANSISTOR, 1
Lead Free Status / RoHS Status:	Lead Free / RoHS Compliant
Stock Condition:	90 In Stock
Ship From:	Hong Kong
Shipment Way:	DHL/Fedex/TNT/UPS/EMS

REMARK: Buy the FQA13N80-F109 Rochester Electronics on xunyun-ic.com, we are Rochester Electronics Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the FQA13N80-F109 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	QFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PN
Package / Case	TO-3P-3, SC-65-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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