Rochester Electronics / NDT01N60T1G

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	7.2 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	160 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223 (TO-261)
Package / Case	TO-261-4, TO-261AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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