Image is for reference, please contact us to get the real picture
Manufacturer Part Number: | SIS110DN-T1-GE3 |
Manufacturer: | Vishay / Siliconix |
Part of Description: | MOSFET N-CH 100V 5.2A/14.2A PPAK |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 3110 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 14.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 54mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8 |
Package / Case | PowerPAK® 1212-8 |