Rochester Electronics / PMF3800SN,115

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Type	Description
Series	TrenchMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	260mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	850 pC @ 10 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	560mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70
Package / Case	SC-70, SOT-323

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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