Rochester Electronics / AUIRLU3110Z

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Type	Description
Series	HEXFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3.98 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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