IR (Infineon Technologies) / IMBG120R045M1HXTMA1

Manufacturer Part Number: IMBG120R045M1HXTMA1
Manufacturer: IR (Infineon Technologies)
Part of Description: TRANS SJT N-CH 1.2KV 47A TO263
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 2535 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesCoolSiC™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1.2 kV
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs63mOhm @ 16A, 18V
Vgs(th) (Max) @ Id5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs46 nC @ 18 V
Vgs (Max)+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds1.527 nF @ 800 V
FET FeatureStandard
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-12
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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