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Manufacturer Part Number: | SIHD2N80E-GE3 |
Manufacturer: | Vishay / Siliconix |
Part of Description: | MOSFET N-CH 800V 2.8A DPAK |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 66 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | E |
Package | Cut Tape (CT) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.75Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |