Rochester Electronics / FDB4020P

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	80mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	665 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	37.5W (Tc)
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AB
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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