ROHM Semiconductor / SCT2H12NZGC11

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Type	Description
Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id	4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 18 V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	184 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PFM
Package / Case	TO-3PFM, SC-93-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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