STMicroelectronics / STB80NF55-08-1

Image is for reference, please contact us to get the real picture

REMARK: Buy the STB80NF55-08-1 STMicroelectronics on xunyun-ic.com, we are STMicroelectronics Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the STB80NF55-08-1 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	STripFET™ II
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3850 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 1756

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	IRFZ14PBF-BE3 Vishay / Siliconix
	SI4864DY-T1-GE3 Vishay / Siliconix
	IRFR3518PBF IR (Infineon Technologies)
	IRFR9020TRR Vishay / Siliconix
	IPI100N04S3-03 Rochester Electronics
	IRF9530NS IR (Infineon Technologies)
	PSMN1R1-25YLC,115 Nexperia
	ZVN4525ZTA Zetex Semiconductors (Diodes Inc.)
	PHB110NQ08T,118 Rochester Electronics
	TK3A60DA(Q,M) Toshiba Electronic Devices and Storage Corporation