Rochester Electronics / IRFR13N20DPBF-IR

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	830 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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