Rochester Electronics / FDB0170N607L

Manufacturer Part Number: FDB0170N607L
Manufacturer: Rochester Electronics
Part of Description: POWER FIELD-EFFECT TRANSISTOR, N
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 26400 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 39A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs243 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds19.25 pF @ 30 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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