IR (Infineon Technologies) / IPB65R280E6ATMA1

Manufacturer Part Number: IPB65R280E6ATMA1
Manufacturer: IR (Infineon Technologies)
Part of Description: MOSFET N-CH 650V 13.8A D2PAK
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 4344 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesCoolMOS™ E6
PackageTape & Reel (TR)
Part StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 100 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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