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Manufacturer Part Number: | IPB65R280E6ATMA1 |
Manufacturer: | IR (Infineon Technologies) |
Part of Description: | MOSFET N-CH 650V 13.8A D2PAK |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 4344 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | CoolMOS™ E6 |
Package | Tape & Reel (TR) |
Part Status | Discontinued at Digi-Key |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |