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Manufacturer Part Number: | IPP65R660CFDAAKSA1 |
Manufacturer: | IR (Infineon Technologies) |
Part of Description: | MOSFET N-CH 650V 6A TO220-3 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 1147 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | Automotive, AEC-Q101, CoolMOS™ |
Package | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 660mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 543 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |