Rochester Electronics / NDD03N80Z-1G

Manufacturer Part Number: NDD03N80Z-1G
Manufacturer: Rochester Electronics
Part of Description: MOSFET N-CH 800V 2.9A IPAK
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 220054 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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