STMicroelectronics / STQ2LN60K3-AP

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Type	Description
Series	SuperMESH3™
Package	Cut Tape (CT)Tape & Box (TB)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

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