Rochester Electronics / IRF6797MTRPBF

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	36A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5.79 pF @ 13 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MX
Package / Case	DirectFET™ Isometric MX

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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