IR (Infineon Technologies) / IAUZ18N10S5L420ATMA1

Image is for reference, please contact us to get the real picture

REMARK: Buy the IAUZ18N10S5L420ATMA1 IR (Infineon Technologies) on xunyun-ic.com, we are IR (Infineon Technologies) Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the IAUZ18N10S5L420ATMA1 within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	OptiMOS™-5
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-32
Package / Case	8-PowerTDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

BUYING OPTIONS

Stock Status: 4373

Minimum: 1

Call for price or sumbit a RFQ

Popular Models

	2SK3670,F(M Toshiba Electronic Devices and Storage Corporation
	IRF7401TRPBF IR (Infineon Technologies)
	TPC6006-H(TE85L,F) Toshiba Electronic Devices and Storage Corporation
	IPP08CN10N G IR (Infineon Technologies)
	PMPB16EPX Nexperia
	IRFI830GPBF Vishay / Siliconix
	BSC061N08NS5ATMA1 IR (Infineon Technologies)
	FQH44N10-F133 Sanyo Semiconductor/ON Semiconductor
	IPD15N06S2L64ATMA2 IR (Infineon Technologies)
	STW3N170 STMicroelectronics