IR (Infineon Technologies) / IAUZ18N10S5L420ATMA1

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Type	Description
Series	OptiMOS™-5
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-32
Package / Case	8-PowerTDFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

package

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