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Manufacturer Part Number: | SCT2H12NYTB |
Manufacturer: | ROHM Semiconductor |
Part of Description: | SICFET N-CH 1700V 4A TO268 |
Lead Free Status / RoHS Status: | Lead Free / RoHS Compliant |
Stock Condition: | 647 In Stock |
Ship From: | Hong Kong |
Shipment Way: | DHL/Fedex/TNT/UPS/EMS |
Type | Description |
---|---|
Series | - |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
Vgs(th) (Max) @ Id | 4V @ 410µA |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
Vgs (Max) | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 44W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268 |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |